The PSP model has been adult jointly by NXP Resebridge (formerly part of Philips Resechief) and the group of Prof. Gildenblat at Arizona State University (formerly at Penn State University).
The source code for MOS Model PSP has been 76e0e67217452d0352d321f434e1402coquet generated from a Verilog-A clarification of the model.
Pstar, the circuit simulator from NXP Spectre, the excursion simulator from Cadence ADS, the excursion simulator from Agilent.
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Introduction to MOS Model PSP
"Introduction to PSP MOSFET Model", G. Gildenblat, X. Li, H. Wang, W. Wu, R. van Langevelde, A.J. Scholten, G.D.J. Smit and D.B.M. Klaassen, Nanotech, 2005.
Documentation for PSP level 102:
suitable-bodied for satellite, analog, and RF; suitable for modern and future amount CMOS technologies; physics-abjectd; rummageining the all-time full-lengths of SP model (Penn State University) and MOS Model 11 (NXP); number of parameters and simulation time comparaccomplished to MOS Model 11; easy parameter excerption.
You can read how to download and install the libraries here.
Source Code & Library
Read increasingly almost MOS Model PSP.
The model definition of MOS Model PSP level 102 and ,psp;MOS Model PSP level 103 are bachelor in PDF format.
Additional documentation
The models are included in a dynamichirpy loaded library chosen SiMKit.
The history of the PSP model can be found here.
The source lawmaking is protected by Copyright &dummy; 1991, 2007, NXP.
SiMKit is related to the post-obit excursion simulators used within NXP:
Model definition of MOS Model PSP
Further ingermination on MOS Model PSP is bachelor in the post-obit related publications:
MOS Model PSP 103.0 is not behindhands uniform with MOS Model PSP 102.3 and contains various comebacks and addendums.
The source lawmaking (i.e., C-code and Verilog-A code) of MOS Model PSP level 103 and PSP level 102 can be found here. The C-code files are chosen device_psp103.c, device_pspnqs103.c for level 103 and device_psp102e.c, device1020.c, device1021.c,psp games, device_pspnqs102e.c, device_pspnqs1020.c, device_psp1021.c for level 102. If you use the included solver, please make sure that you compile on a system that supports Fortran 77.
The history of the source lawmaking can be found here.
PSP102_Summary.pdf file (625kB). The parameter excerption methodology is moreover described in this report. Last upstage November 2007. "From BSIM3/4 to PSP:Translation of flicker noise and junction parameters". Related Publications
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&dummy; 2006 IEEE. Personal use of this material is permitted. Howoverly, permission to reprint/republish this material for agitprop or promotional purposes or for creating new commonage works for resale or redistribution to servers or lists, or to reuse any editionrighted component of this work in other works must be obtained from the IEEE.
The PSP model is a surgrimace-potential abjectd meaty MOSFET model, containing all relevant physical effects (mobility reduction, veloasphalt saturation, DIBL, gate current, lateral doping gradient effects, STI stress, etc.) necessary to model present-day and upcoming deep-submicron amount CMOS technologies. Unlike previous NXP MOS models, the source/bleed junction model, c.q. the JUNCAP2 model, is an integrated part of the PSP model.
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